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Samsung M378A1G43DB0-CPB 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB

Samsung M378A1G43DB0-CPB 8GB vs Smart Modular SMS4TDC3C0K0446SCG 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 39
    左右 8% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 14.3
    测试中的平均数值
Smart Modular SMS4TDC3C0K0446SCG 4GB 需要考虑的原因
Smart Modular SMS4TDC3C0K0446SCG 4GB
报告一个错误
  • 更快的写入速度，GB/s
    10.8 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 39
  • 读取速度，GB/s
    15.0 left arrow 14.3
  • 写入速度，GB/s
    10.3 left arrow 10.8
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2159

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378A1G43DB0-CPB 8GB
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Smart Modular SMS4TDC3C0K0446SCG 4GB
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Kingston 99U5595-005.A00LF 2GB
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内存RAM
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内存RAM
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