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Samsung M378A1G43EB1-CPB 8GB
Corsair CMW32GX4M4D3600C16 8GB

Samsung M378A1G43EB1-CPB 8GB vs Corsair CMW32GX4M4D3600C16 8GB

总分
star star star star star
Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

总分
star star star star star
Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

差异 规格 评论

差异

Samsung M378A1G43EB1-CPB 8GB 需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB
报告一个错误
Corsair CMW32GX4M4D3600C16 8GB 需要考虑的原因
Corsair CMW32GX4M4D3600C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    19.9 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 11.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43EB1-CPB 8GB
Corsair CMW32GX4M4D3600C16 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 26
  • 读取速度，GB/s
    15.4 left arrow 19.9
  • 写入速度，GB/s
    11.5 left arrow 17.1
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2763 left arrow 3972

Samsung M378A1G43EB1-CPB 8GB RAM的比较

Samsung M378A1K43BB1-CPB 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB

Corsair CMW32GX4M4D3600C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
V-GEN D4S8GL32A8TS 8GB
V-GEN D4S8GL32A8TS 8GB
内存RAM
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
Corsair CMW32GX4M4D3600C16 8GB
Corsair CMW32GX4M4D3600C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hewlett-Packard 7EH55AA# 8GB
Hewlett-Packard 7EH55AA# 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
内存RAM
Apacer Technology 75.A73AA.G03 2GB
Apacer Technology 75.A73AA.G03 2GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM