Samsung M378A1K43EB2-CWE 8GB vs Avant Technology W641GU48J5213ND 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Avant Technology W641GU48J5213ND 8GB

Avant Technology W641GU48J5213ND 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 16.3

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Avant Technology W641GU48J5213ND 8GB

需要考虑的原因
Avant Technology W641GU48J5213ND 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 -38% 更低的延时
更快的写入速度，GB/s

12.5 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Avant Technology W641GU48J5213ND 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 24
读取速度，GB/s

17.6 16.3
写入速度，GB/s

12.0 12.5
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2858

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A1K43EB2-CWE 8GB

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Kingston 99U5474-028.A00LF 4GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

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Kingston 9905624-007.A00G 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMW32GX4M4K4000C19 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB