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Samsung M378A1K43EB2-CWE 8GB
Corsair CMK64GX4M4B2800C14 16GB

Samsung M378A1K43EB2-CWE 8GB vs Corsair CMK64GX4M4B2800C14 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Corsair CMK64GX4M4B2800C14 16GB

Corsair CMK64GX4M4B2800C14 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Corsair CMK64GX4M4B2800C14 16GB 需要考虑的原因
Corsair CMK64GX4M4B2800C14 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 -22% 更低的延时

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK64GX4M4B2800C14 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 27
  • 读取速度，GB/s
    17.6 left arrow 14.8
  • 写入速度，GB/s
    12.0 left arrow 11.1
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2918

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMK64GX4M4B2800C14 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK64GX4M4B2800C14 16GB
Corsair CMK64GX4M4B2800C14 16GB
内存RAM
Ramos Technology EEB8GB681CAE-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix GKE160SO102408-2400 16GB
SK Hynix GKE160SO102408-2400 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-3000C16-16GVRB 16GB
G Skill Intl F4-3000C16-16GVRB 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMK64GX4M8B2800C14 8GB
Corsair CMK64GX4M8B2800C14 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905630-039.A00G 16GB
Kingston 9905630-039.A00G 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Gloway International (HK) STK4U2400D17082C 8GB
Gloway International (HK) STK4U2400D17082C 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM