Samsung M471A5244CB0-CWE 4GB vs Avant Technology W642GU42J2320NH 16GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Avant Technology W642GU42J2320NH 16GB

Avant Technology W642GU42J2320NH 16GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

Avant Technology W642GU42J2320NH 16GB

需要考虑的原因
Avant Technology W642GU42J2320NH 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

18.1 15.5

测试中的平均数值
更快的写入速度，GB/s

14.8 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Avant Technology W642GU42J2320NH 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

15.5 18.1
写入速度，GB/s

12.0 14.8
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2283 3505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA451R7MFR8N-TFTD 4GB

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Kingston HX421C14FB/4 4GB

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EVGA 16G-D4-2666-MR 4GB

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Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

G Skill Intl F4-3200C16-8GVKB 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Patriot Memory (PDP Systems) 3866 C18 Series 8GB

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