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Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology BL8G36C16U4BL.M8FE1 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Crucial Technology BL8G36C16U4BL.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 26
  • 读取速度，GB/s
    17.6 left arrow 19.3
  • 写入速度，GB/s
    12.0 left arrow 16.7
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3733

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston 9905624-016.A00G 8GB
Kingston 9905624-016.A00G 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F4-3200C18-16GRS 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Corsair CM4B16G1J2400A16K2-O 16GB
Corsair CM4B16G1J2400A16K2-O 16GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Corsair CMK32GX4M2A2800C16 16GB
Corsair CMK32GX4M2A2800C16 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMW32GX4M2C3200C16 16GB
Corsair CMW32GX4M2C3200C16 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM