Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology CT4G4SFS8213.C8FBR2 4GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 12.9

测试中的平均数值
更快的写入速度，GB/s

12.0 11.4

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

17.6 12.9
写入速度，GB/s

12.0 11.4
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

Kingston 9905403-437.A01LF 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

Avant Technology J642GU42J2320NQ 16GB

Avant Technology J642GU42J2320NQ 16GB