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Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology CT8G4DFS824A.C8FDD1 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 38
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Crucial Technology CT8G4DFS824A.C8FDD1 8GB 需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 38
  • 读取速度，GB/s
    17.6 left arrow 14.5
  • 写入速度，GB/s
    12.0 left arrow 10.5
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2659

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB RAM的比较

Samsung M395T2863QZ4-CF76 1GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
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最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMSO16GX4M1A2133C15 16GB
Corsair CMSO16GX4M1A2133C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2Z4000C18 16GB
Corsair CMK32GX4M2Z4000C18 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CM4X8GD3200C16K2E 8GB
Corsair CM4X8GD3200C16K2E 8GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston KC5N22-MIE 16GB
Kingston KC5N22-MIE 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Crucial Technology BL8G30C15U4B.8FE 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Kingston ASU21D4U5S1MB-4 4GB
Kingston ASU21D4U5S1MB-4 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Kingston HP26D4U9S8MD-8 8GB
内存RAM
SK Hynix HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6EFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston MSI24D4U7D8MD-16 16GB
内存RAM