RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited KD48GS481-26N1600 8GB

Samsung M378A1K43EB2-CWE 8GB vs Essencore Limited KD48GS481-26N1600 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Essencore Limited KD48GS481-26N1600 8GB

Essencore Limited KD48GS481-26N1600 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 17.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Essencore Limited KD48GS481-26N1600 8GB 需要考虑的原因
Essencore Limited KD48GS481-26N1600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 -18% 更低的延时
  • 更快的写入速度，GB/s
    14.2 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited KD48GS481-26N1600 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 28
  • 读取速度，GB/s
    17.6 left arrow 17.5
  • 写入速度，GB/s
    12.0 left arrow 14.2
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2900

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Essencore Limited KD48GS481-26N1600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMH32GX4M2D3600C18 16GB
Corsair CMH32GX4M2D3600C18 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Corsair CMT64GX4M4C3200C16 16GB
Corsair CMT64GX4M4C3200C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Samsung M471A2K43BB1-CRC 16GB
Samsung M471A2K43BB1-CRC 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM