Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3300C16-16GTZSW 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 13.7

测试中的平均数值
更快的写入速度，GB/s

12.0 11.3

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-3300C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 -14% 更低的延时

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3300C16-16GTZSW 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 29
读取速度，GB/s

17.6 13.7
写入速度，GB/s

12.0 11.3
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston 9905678-007.A00G 8GB

Kingston 9905678-007.A00G 8GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

Kingston 9905712-035.A00G 16GB

Kingston 9905712-035.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK128GX4M4A2666C16 32GB

Corsair CMK128GX4M4A2666C16 32GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB