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Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-8GVK 8GB

Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3333C16-8GVK 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
G Skill Intl F4-3333C16-8GVK 8GB

G Skill Intl F4-3333C16-8GVK 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 17.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-3333C16-8GVK 8GB 需要考虑的原因
G Skill Intl F4-3333C16-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 -18% 更低的延时
  • 更快的写入速度，GB/s
    15.3 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-8GVK 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 28
  • 读取速度，GB/s
    17.6 left arrow 17.3
  • 写入速度，GB/s
    12.0 left arrow 15.3
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3914

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

G Skill Intl F4-3333C16-8GVK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-8GVK 8GB
G Skill Intl F4-3333C16-8GVK 8GB
内存RAM
Kingston ACR16D3LU1KBG/4G 4GB
Kingston ACR16D3LU1KBG/4G 4GB
Corsair CMR32GX4M2C3000C15 16GB
Corsair CMR32GX4M2C3000C15 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMD64GX4M8X3800C19 8GB
Corsair CMD64GX4M8X3800C19 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology W641GU48J5213ND 8GB
Avant Technology W641GU48J5213ND 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BL16G26C16U4R.16FE 16GB
Crucial Technology BL16G26C16U4R.16FE 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965640-016.A00G 32GB
Kingston 9965640-016.A00G 32GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM