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Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB

Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3733C17-8GTZKW 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-3733C17-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3733C17-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 33
    左右 -74% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 19
  • 读取速度，GB/s
    17.6 left arrow 19.3
  • 写入速度，GB/s
    12.0 left arrow 13.9
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3310

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

G Skill Intl F4-3733C17-8GTZKW 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965662-004.A00G 16GB
Kingston 9965662-004.A00G 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMT64GX4M4K3600C18 16GB
Corsair CMT64GX4M4K3600C18 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited KD4AGS88C-32N220D 16GB
Essencore Limited KD4AGS88C-32N220D 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMD8GX4M2B4000C19 4GB
Corsair CMD8GX4M2B4000C19 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965604-008.C00G 8GB
Kingston 9965604-008.C00G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
内存RAM
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
内存RAM