RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
比较
Samsung M378A1K43EB2-CWE 8GB vs Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
总分
Samsung M378A1K43EB2-CWE 8GB
总分
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
35
左右 6% 更低的延时
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
报告一个错误
更快的读取速度,GB/s
19
17.6
测试中的平均数值
更快的写入速度,GB/s
13.8
12.0
测试中的平均数值
规格
完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
35
读取速度,GB/s
17.6
19.0
写入速度,GB/s
12.0
13.8
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2910
3331
Samsung M378A1K43EB2-CWE 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX2800C14D4/8GX 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F3-1600C11-4GIS 4GB
Kingston KHX2400C12D4/8GX 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston XG9XKG-MIE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology W641GU48J7240ND 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kllisre M471A3243BB0-CP50 16GB
Kingston 99U5584-004.A00LF 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
SK Hynix HMA451U7MFR8N-TF 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD16GX4M2B3200C16 8GB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Kingston MSI16D3LS1MNG/8G 8GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW32GX4M4C3200C16 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
SK Hynix HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF51272AZ-2G3B1 4GB
报告一个错误
×
Bug description
Source link