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Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
比较
Samsung M378A1K43EB2-CWE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
总分
Samsung M378A1K43EB2-CWE 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
34
左右 3% 更低的延时
更快的读取速度,GB/s
17.6
11.1
测试中的平均数值
更快的写入速度,GB/s
12.0
9.5
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
报告一个错误
规格
完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
34
读取速度,GB/s
17.6
11.1
写入速度,GB/s
12.0
9.5
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2910
2319
Samsung M378A1K43EB2-CWE 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM的比较
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK128GX4M4E3200C16 32GB
Kingston 9905471-002.A00LF 2GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Samsung M378B1G73BH0-CK0 8GB
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5773DH0-CH9 2GB
Essencore Limited IM48GU48N21-FFFHM 8GB
G Skill Intl F5-5600J4040C16G 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston KV0M5R-HYD 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KHX3733C19D4/16GX 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M471A1K43EB1-CWE 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2800C16-8GRR 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2133C15-8GFXR 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Gloway International (HK) STKD4GAM2133-F 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
报告一个错误
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Bug description
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