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Samsung M378A1K43EB2-CWE 8GB
Kingston 9905701-020.A00G 16GB

Samsung M378A1K43EB2-CWE 8GB vs Kingston 9905701-020.A00G 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Kingston 9905701-020.A00G 16GB

Kingston 9905701-020.A00G 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Kingston 9905701-020.A00G 16GB 需要考虑的原因
Kingston 9905701-020.A00G 16GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905701-020.A00G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 33
  • 读取速度，GB/s
    17.6 left arrow 14.9
  • 写入速度，GB/s
    12.0 left arrow 10.7
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2922

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Kingston 9905701-020.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378A1K43EB2-CWE 8GB
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Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
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内存RAM
PUSKILL DDR3 1600 8G 8GB
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Avexir Technologies Corporation T-20181206 8GB
内存RAM
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SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
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内存RAM
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Samsung M471A1K43CB1-CTD 8GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
内存RAM