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Samsung M378A1K43EB2-CWE 8GB
Kingston KHX2666C13/8GX 8GB

Samsung M378A1K43EB2-CWE 8GB vs Kingston KHX2666C13/8GX 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Kingston KHX2666C13/8GX 8GB

Kingston KHX2666C13/8GX 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 17.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston KHX2666C13/8GX 8GB 需要考虑的原因
Kingston KHX2666C13/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 -14% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Kingston KHX2666C13/8GX 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 29
  • 读取速度，GB/s
    17.6 left arrow 17.2
  • 写入速度，GB/s
    12.0 left arrow 13.4
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3311

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Kingston KHX2666C13/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Corsair CMT32GX4M2E3200C16 16GB
Corsair CMT32GX4M2E3200C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Corsair CMT32GX4M2C3000C15 16GB
Corsair CMT32GX4M2C3000C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BA160B.16F 8GB
Crucial Technology CT102464BA160B.16F 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRKB 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK16GX4M4B3400C16 4GB
Corsair CMK16GX4M4B3400C16 4GB
内存RAM