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A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M2C3466C16W 16GB
比较
A-DATA Technology VDQVE1B16 2GB vs Corsair CMD32GX4M2C3466C16W 16GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Corsair CMD32GX4M2C3466C16W 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
19.2
测试中的平均数值
更快的写入速度,GB/s
2,061.2
16.6
测试中的平均数值
需要考虑的原因
Corsair CMD32GX4M2C3466C16W 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
46
左右 -92% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M2C3466C16W 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
24
读取速度,GB/s
4,937.3
19.2
写入速度,GB/s
2,061.2
16.6
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
759
4032
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Corsair CMD32GX4M2C3466C16W 16GB RAM的比较
Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Team Group Inc. Team-Elite-1333 4GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
A-DATA Technology DDR4 2666 8GB
Kingston ACR21D4S15HAG/8G 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M2C3466C16W 16GB
SK Hynix HMT41GS6BFR8A-PB 8GB
G Skill Intl F3-1600C9-8GRSL 8GB
AMD AE34G2139U2 4GB
Kingston 9965669-017.A00G 16GB
AMD AE34G1601U1 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KF3600C18D4/16GX 16GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
SK Hynix HMA851U6CJR6N-VK 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4266C19-8GTZKW 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
报告一个错误
×
Bug description
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