Samsung M378A1K43EB2-CWE 8GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 52

左右 37% 更低的延时
更快的读取速度，GB/s

17.6 10.2

测试中的平均数值
更快的写入速度，GB/s

12.0 8.2

测试中的平均数值
更高的内存带宽，mbps

25600 17500

左右 1.46% 更高的带宽

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 52
读取速度，GB/s

17.6 10.2
写入速度，GB/s

12.0 8.2
内存带宽，mbps

25600 17500

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz no data
排名PassMark (越多越好)

2910 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Apacer Technology 78.CAGPN.DF40B 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Teikon TMA81GS6CJR8N-VKSC 8GB

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Crucial Technology CT8G4SFRA266.C4FE 8GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Samsung M393B5270CH0-CH9 4GB

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Avant Technology W642GU42J5213N8 16GB

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Qimonda 72T128420EFA3SB2 1GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB