Samsung M378A1K43EB2-CWE 8GB vs Micron Technology CT8G4DFD8213.16FA2 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 11.9

测试中的平均数值
更快的写入速度，GB/s

12.0 10.2

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Micron Technology CT8G4DFD8213.16FA2 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

17.6 11.9
写入速度，GB/s

12.0 10.2
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Apacer Technology 78.C1GET.AU10C 8GB

Apacer Technology 78.C1GET.AU10C 8GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB