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Samsung M378A1K43EB2-CWE 8GB
Samsung M378A4G43MB1-CTD 32GB

Samsung M378A1K43EB2-CWE 8GB vs Samsung M378A4G43MB1-CTD 32GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 38
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 15.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Samsung M378A4G43MB1-CTD 32GB 需要考虑的原因
Samsung M378A4G43MB1-CTD 32GB
报告一个错误
  • 更快的写入速度，GB/s
    12.6 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A4G43MB1-CTD 32GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 38
  • 读取速度，GB/s
    17.6 left arrow 15.4
  • 写入速度，GB/s
    12.0 left arrow 12.6
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3147

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Samsung M378A4G43MB1-CTD 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.CAGNT.4050B 8GB
Apacer Technology 78.CAGNT.4050B 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905744-062.A00G 32GB
Kingston 9905744-062.A00G 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM