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Samsung M378A2K43EB1-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Samsung M378A2K43EB1-CWE 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

总分
star star star star star
Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

差异 规格 评论

差异

Samsung M378A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M378A2K43EB1-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A2K43EB1-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 33
  • 读取速度，GB/s
    18.5 left arrow 11.6
  • 写入速度，GB/s
    13.8 left arrow 8.3
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3341 left arrow 2227

Samsung M378A2K43EB1-CWE 16GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT102464BF160B-16F 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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G Skill Intl F4-3200C16-8GSXKB 8GB
内存RAM
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
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Corsair CM4X4GF2400C16S2 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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Corsair CMSX16GX4M2A3200C22 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Kingston 9905702-027.A00G 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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内存RAM
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Kingston 9905403-011.A03LF 2GB
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Kingston 99P5471-016.A00LF 8GB
内存RAM
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Samsung M391B5273CH0-CH9 4GB
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Kingston 9965600-018.A00G 16GB
内存RAM
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Corsair VS1GB800D2 1GB
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Memphis Electronic D4SO1G724GI-A58SD 8GB
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