Samsung M378A2K43EB1-CWE 16GB vs Patriot Memory (PDP Systems) PSD416G266681 16GB

总分

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

总分

Patriot Memory (PDP Systems) PSD416G266681 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

差异规格评论

差异

Samsung M378A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M378A2K43EB1-CWE 16GB

报告一个错误

更快的读取速度，GB/s

18.5 14.9

测试中的平均数值
更快的写入速度，GB/s

13.8 10.2

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Patriot Memory (PDP Systems) PSD416G266681 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G266681 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 33

左右 -3% 更低的延时

规格

完整的技术规格清单

Samsung M378A2K43EB1-CWE 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 32
读取速度，GB/s

18.5 14.9
写入速度，GB/s

13.8 10.2
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3341 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

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Corsair CMRX8GD3000C16R4D 8GB

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Samsung M393B2G70BH0-CK0 16GB

Corsair CMK64GX4M4B2800C14 16GB

Corsair CMK64GX4M4B2800C14 16GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB