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Samsung M378A5143EB1-CPB 4GB
SK Hynix HMA451R7MFR8N-TF 4GB

Samsung M378A5143EB1-CPB 4GB vs SK Hynix HMA451R7MFR8N-TF 4GB

总分
star star star star star
Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

总分
star star star star star
SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

差异 规格 评论

差异

Samsung M378A5143EB1-CPB 4GB 需要考虑的原因
Samsung M378A5143EB1-CPB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 53
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    14.6 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.6
    测试中的平均数值
SK Hynix HMA451R7MFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451R7MFR8N-TF 4GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A5143EB1-CPB 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 53
  • 读取速度，GB/s
    14.6 left arrow 10.4
  • 写入速度，GB/s
    10.8 left arrow 8.6
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2298 left arrow 2285

Samsung M378A5143EB1-CPB 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HMA451R7MFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378A5143EB1-CPB 4GB
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