Samsung M378B1G73EB0-CK0 8GB vs Micron Technology 18ASF1G72PDZ-2G1A1 8GB

总分

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

总分

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

差异规格评论

差异

Samsung M378B1G73EB0-CK0 8GB

需要考虑的原因
Samsung M378B1G73EB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 51

左右 20% 更低的延时
更快的读取速度，GB/s

13.3 10.9

测试中的平均数值
更快的写入速度，GB/s

8.5 8.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B1G73EB0-CK0 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 51
读取速度，GB/s

13.3 10.9
写入速度，GB/s

8.5 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 2286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Transcend Information JM2400HSB-8G 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CMK128GX4M4A2666C16 32GB

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PNY Electronics PNY 2GB

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Mushkin 996902 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

AMD R744G2400U1S 4GB

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