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Samsung M378B1G73QH0-CK0 8GB
G Skill Intl F4-3200C16-32GTZN 32GB

Samsung M378B1G73QH0-CK0 8GB vs G Skill Intl F4-3200C16-32GTZN 32GB

总分
star star star star star
Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

总分
star star star star star
G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB

差异 规格 评论

差异

Samsung M378B1G73QH0-CK0 8GB 需要考虑的原因
Samsung M378B1G73QH0-CK0 8GB
报告一个错误
G Skill Intl F4-3200C16-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-3200C16-32GTZN 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 42
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M378B1G73QH0-CK0 8GB
G Skill Intl F4-3200C16-32GTZN 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 32
  • 读取速度，GB/s
    13.6 left arrow 16.7
  • 写入速度，GB/s
    8.4 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 3524

Samsung M378B1G73QH0-CK0 8GB RAM的比较

Corsair CMV8GX3M1A1600C11 8GB
G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3200C16-32GTZN 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston KHX2666C16D4/32GX 32GB
Kingston KHX2666C16D4/32GX 32GB
内存RAM
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3600 8GB
A-DATA Technology DDR4 3600 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMWX8GD3200C16W4 8GB
Corsair CMWX8GD3200C16W4 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
SK Hynix HMT325U6CFR8C-H9 2GB
SK Hynix HMT325U6CFR8C-H9 2GB
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
G Skill Intl F4-3200C16-32GTZN 32GB
G Skill Intl F4-3200C16-32GTZN 32GB
内存RAM
Kingston 99U5469-053.A00LF 4GB
Kingston 99U5469-053.A00LF 4GB
SK Hynix HMT351S6CFR8C-H9 4GB
SK Hynix HMT351S6CFR8C-H9 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C14-16GVK 16GB
G Skill Intl F4-3200C14-16GVK 16GB
内存RAM