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Samsung M378B5173BH0-CH9 4GB
A-DATA Technology AO1P24HCST2-BSCS 16GB

Samsung M378B5173BH0-CH9 4GB vs A-DATA Technology AO1P24HCST2-BSCS 16GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 18% 更低的延时
A-DATA Technology AO1P24HCST2-BSCS 16GB 需要考虑的原因
A-DATA Technology AO1P24HCST2-BSCS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 28
  • 读取速度，GB/s
    13.4 left arrow 17.0
  • 写入速度，GB/s
    8.0 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 3027

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
内存RAM
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMK8GX4M1D2400C14 8GB
Corsair CMK8GX4M1D2400C14 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMT16GX4M2K3600C16 8GB
Corsair CMT16GX4M2K3600C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-16GVR 16GB
G Skill Intl F4-2666C15-16GVR 16GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Corsair CMK64GX4M4D3000C16 16GB
Corsair CMK64GX4M4D3000C16 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX3000C15D4/8GX 8GB
Kingston KHX3000C15D4/8GX 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 99U5665-001.A00G 4GB
Kingston 99U5665-001.A00G 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
内存RAM
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin 99[2/7/4]209F 8GB
Mushkin 99[2/7/4]209F 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM