Samsung M378B5173BH0-CH9 4GB vs Avant Technology J642GU42J5213N1 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Avant Technology J642GU42J5213N1 16GB

Avant Technology J642GU42J5213N1 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 15% 更低的延时

Avant Technology J642GU42J5213N1 16GB

需要考虑的原因
Avant Technology J642GU42J5213N1 16GB

报告一个错误

更快的读取速度，GB/s

14.6 13.4

测试中的平均数值
更快的写入速度，GB/s

10.1 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Avant Technology J642GU42J5213N1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 27
读取速度，GB/s

13.4 14.6
写入速度，GB/s

8.0 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2577

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5644EB0-CPB 2GB

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Avant Technology J642GU42J5213N1 16GB

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PNY Electronics PNY 2GB

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Heoriady HX2666CX15D4/4G 4GB

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Kingston 99U5471-056.A00LF 8GB

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Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

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Kingston KHX1600C9S3L/4G 4GB

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G Skill Intl F4-3200C16-8GTZSK 8GB

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Kingston LV32D4U2S8ME-16X 16GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB