Samsung M378B5173BH0-CH9 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 38% 更低的延时

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

报告一个错误

更快的读取速度，GB/s

16.9 13.4

测试中的平均数值
更快的写入速度，GB/s

13.8 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 37
读取速度，GB/s

13.4 16.9
写入速度，GB/s

8.0 13.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2269 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3300C16-16GTZ 16GB

G Skill Intl F4-3300C16-16GTZ 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston HP24D4U7S8MBP-8 8GB

Kingston HP24D4U7S8MBP-8 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB