Samsung M378B5173BH0-CH9 4GB vs Corsair CMK16GX4M2D3600C18 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Corsair CMK16GX4M2D3600C18 8GB

Corsair CMK16GX4M2D3600C18 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时

Corsair CMK16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMK16GX4M2D3600C18 8GB

报告一个错误

更快的读取速度，GB/s

17.8 13.4

测试中的平均数值
更快的写入速度，GB/s

14.8 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Corsair CMK16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

13.4 17.8
写入速度，GB/s

8.0 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M2A2800C16 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BLS16G4D32AESB.M16FE 16GB

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Kingston 9905458-017.A01LF 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston LV26D4S9S8HJ-8 8GB