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SK Hynix HMA82GS6CJR8N-VK 16GB
Netac Technology Co Ltd E40832A 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB vs Netac Technology Co Ltd E40832A 8GB

总分
star star star star star
SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分
star star star star star
Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

差异 规格 评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB 需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB
报告一个错误
Netac Technology Co Ltd E40832A 8GB 需要考虑的原因
Netac Technology Co Ltd E40832A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 36
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 10.1
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA82GS6CJR8N-VK 16GB
Netac Technology Co Ltd E40832A 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 34
  • 读取速度，GB/s
    15.0 left arrow 16.4
  • 写入速度，GB/s
    10.1 left arrow 10.8
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2657 left arrow 2732

SK Hynix HMA82GS6CJR8N-VK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB

Netac Technology Co Ltd E40832A 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
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A-DATA Technology ADOVE1A0834E 1GB
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G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
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G Skill Intl F4-2400C16-16GRS 16GB
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A-DATA Technology AD73I1B1672EG 2GB
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Kingston 9965589-007.D01G 8GB
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ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
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Avant Technology W642GU42J7240N8 16GB
内存RAM
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Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-4000C17-8GTZR 8GB
G Skill Intl F4-4000C17-8GTZR 8GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
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G Skill Intl F4-3600C18-8GVK 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Kingston KH2400C15D4/8 8GB
内存RAM