Samsung M378B5173BH0-CH9 4GB vs Crucial Technology CB8GS2400.C8D 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 89

左右 74% 更低的延时
更快的写入速度，GB/s

8.0 6.8

测试中的平均数值

Crucial Technology CB8GS2400.C8D 8GB

需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB

报告一个错误

更快的读取速度，GB/s

13.6 13.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CB8GS2400.C8D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 89
读取速度，GB/s

13.4 13.6
写入速度，GB/s

8.0 6.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 1518

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M471B5673FH0-CF8 2GB

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Apacer Technology 78.C1GMM.AUC0B 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMW64GX4M8C3466C16 8GB

Corsair CMW64GX4M8C3466C16 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

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G Skill Intl F4-3333C16-4GRRD 4GB