Samsung M378B5173BH0-CH9 4GB vs G Skill Intl F4-2800C15-16GVR 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时

G Skill Intl F4-2800C15-16GVR 16GB

需要考虑的原因
G Skill Intl F4-2800C15-16GVR 16GB

报告一个错误

更快的读取速度，GB/s

16.4 13.4

测试中的平均数值
更快的写入速度，GB/s

12.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-2800C15-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

13.4 16.4
写入速度，GB/s

8.0 12.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C15-16GVR 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Micron Technology 18ASF2G72AZ-2G1A1 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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