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Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB

Samsung M378B5173BH0-CH9 4GB vs G Skill Intl F4-3300C16-16GTZSW 16GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 29
    左右 21% 更低的延时
G Skill Intl F4-3300C16-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3300C16-16GTZSW 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 29
  • 读取速度，GB/s
    13.4 left arrow 13.7
  • 写入速度，GB/s
    8.0 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 2967

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
G Skill Intl F4-3300C16-16GTZSW 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMK32GX4M2A2133C13 16GB
Corsair CMK32GX4M2A2133C13 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C19-16GVRB 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Corsair CMD16GX4M2B3866C18 8GB
Corsair CMD16GX4M2B3866C18 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMK32GX4M2Z2400C16 16GB
Corsair CMK32GX4M2Z2400C16 16GB
内存RAM