Samsung M3 78T3354BZ0-CCC 256MB vs Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.8

测试中的平均数值

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

需要考虑的原因
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 -18% 更低的延时
更快的写入速度，GB/s

12.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 39
读取速度，GB/s

2,909.8 14.8
写入速度，GB/s

1,519.2 12.3
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 2188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-013.A00LF 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMK16GX4M2B3733C17 8GB

Corsair CMK16GX4M2B3733C17 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB