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Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
比较
Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
总分
Samsung M378B5173BH0-CH9 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
更快的写入速度,GB/s
8.0
6.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
报告一个错误
更快的读取速度,GB/s
13.6
13.4
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
23
23
读取速度,GB/s
13.4
13.6
写入速度,GB/s
8.0
6.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2269
2339
Samsung M378B5173BH0-CH9 4GB RAM的比较
Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB RAM的比较
A-DATA Technology DQVE1908 512MB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-013.A00LF 2GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Crucial Technology CT51264BF160B.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMSX8GX4M2A2400C16 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston 9965662-016.A00G 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston KF3600C18D4/16GX 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston KVR26N19D8/16 16GB
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905663-005.A00G 16GB
报告一个错误
×
Bug description
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