Samsung M378B5173BH0-CH9 4GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 85

左右 73% 更低的延时
更快的读取速度，GB/s

13.4 11.3

测试中的平均数值
更快的写入速度，GB/s

8.0 6.0

测试中的平均数值

InnoDisk Corporation M4S0-4GSSNCIK 4GB

需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 85
读取速度，GB/s

13.4 11.3
写入速度，GB/s

8.0 6.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 1118

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A2G40EB2-CTD 16GB

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Corsair CMU32GX4M4C3400C16 8GB

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Crucial Technology BLS8G4S240FSDK.8FBD 8GB

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Samsung M393A1G40DB0-CPB 8GB

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Micron Technology 4ATF51264AZ-2G6E1 4GB

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Samsung M378B5173BH0-CH9 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Kingston 9905471-006.A01LF 4GB

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Samsung M474A1G43DB0-CPB 8GB

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Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB