Samsung M378B5173BH0-CH9 4GB vs INTENSO 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

INTENSO 4GB

INTENSO 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 36% 更低的延时
更快的读取速度，GB/s

13.4 12.1

测试中的平均数值

INTENSO 4GB

需要考虑的原因
INTENSO 4GB

报告一个错误

更快的写入速度，GB/s

9.3 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

INTENSO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 36
读取速度，GB/s

13.4 12.1
写入速度，GB/s

8.0 9.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFRA32A.M16FRS 16GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-3200C16-8GVGB 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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SK Hynix HMA82GU7AFR8N-UH 16GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

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ADVAN Inc AM42E28UD04T-NVL 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Crucial Technology CT8G4SFS8266.C8FE 8GB

Crucial Technology CT8G4SFS8266.C8FE 8GB