Samsung M378B5173BH0-CH9 4GB vs Kingston KHX2933C15D4/8GX 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Kingston KHX2933C15D4/8GX 8GB

Kingston KHX2933C15D4/8GX 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 21% 更低的延时

Kingston KHX2933C15D4/8GX 8GB

需要考虑的原因
Kingston KHX2933C15D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

17.3 13.4

测试中的平均数值
更快的写入速度，GB/s

14.2 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Kingston KHX2933C15D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 29
读取速度，GB/s

13.4 17.3
写入速度，GB/s

8.0 14.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 3437

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2B3200C16 8GB

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Corsair CMW16GX4M2C3200C16 8GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

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Kingston 9905428-401.A00LF 8GB

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SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

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Kingston 9965516-112.A00LF 16GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston KHX21334D4/8G 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-2666C18-32GRS 32GB

G Skill Intl F4-2666C18-32GRS 32GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-2400C17-4GNT 4GB

G Skill Intl F4-2400C17-4GNT 4GB