Samsung M4 70T5663CZ3-CE6 2GB vs Kingston KHX21334D4/8G 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Kingston KHX21334D4/8G 8GB

Kingston KHX21334D4/8G 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.2

测试中的平均数值

Kingston KHX21334D4/8G 8GB

需要考虑的原因
Kingston KHX21334D4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 69

左右 -130% 更低的延时
更快的写入速度，GB/s

6.2 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Kingston KHX21334D4/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 30
读取速度，GB/s

3,325.1 11.2
写入速度，GB/s

1,441.2 6.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 1914

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Golden Empire CL14-16-16 D4-2400 16GB

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Avant Technology F641GU67F9333G 8GB

Corsair CMK16GX4M1A2400C14 16GB

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Kingston 9965433-034.A00LF 4GB

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Peak Electronics 256X64M-67E 2GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB