Samsung M378B5173BH0-CH9 4GB vs Mushkin 99[2/7/4]190F 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时

Mushkin 99[2/7/4]190F 4GB

需要考虑的原因
Mushkin 99[2/7/4]190F 4GB

报告一个错误

更快的读取速度，GB/s

14.1 13.4

测试中的平均数值
更快的写入速度，GB/s

10.7 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Mushkin 99[2/7/4]190F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 26
读取速度，GB/s

13.4 14.1
写入速度，GB/s

8.0 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173BH0-CH9 4GB

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A-DATA Technology DDR3 1333G 2GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Kingston HX424C15FB/8 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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SK Hynix V-GeN D4H8GL26A8TX5 8GB

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Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB