TwinMOS 8DPT5MK8-TATP 2GB vs Mushkin 99[2/7/4]190F 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.1

测试中的平均数值

Mushkin 99[2/7/4]190F 4GB

需要考虑的原因
Mushkin 99[2/7/4]190F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 -104% 更低的延时
更快的写入速度，GB/s

10.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Mushkin 99[2/7/4]190F 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 26
读取速度，GB/s

3,726.4 14.1
写入速度，GB/s

1,590.1 10.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 99[2/7/4]200[F/T] 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Kingston 9905403-444.A00LF 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Samsung 1600 CL10 Series 8GB

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Panram International Corporation PUD43000C164G2NJK 4GB

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Crucial Technology CT16G4SFRA266.M8FB 16GB

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Kingston 99U5584-005.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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