Samsung M378B5173BH0-CH9 4GB vs Samsung M378A1K43CB2-CTD 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 32

左右 28% 更低的延时

Samsung M378A1K43CB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43CB2-CTD 8GB

报告一个错误

更快的读取速度，GB/s

15.9 13.4

测试中的平均数值
更快的写入速度，GB/s

12.0 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Samsung M378A1K43CB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 32
读取速度，GB/s

13.4 15.9
写入速度，GB/s

8.0 12.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 2952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited 8GBF1X08QFHH38-135-K 8GB

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Corsair CMV16GX4M1L2400C16 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT8G4SFD8213.M16FB 8GB

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Samsung M378B5173BH0-CH9 4GB

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

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Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

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Kingston KF3200C20S4/32GX 32MB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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Kingston HP698651-154-MCN 8GB

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Crucial Technology BLS8G4D32AESBK.M8FE 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9965589-035.D00G 16GB