Samsung M378B5173BH0-CH9 4GB vs Samsung M471A1K43DB1-CTD 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 34% 更低的延时

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更快的读取速度，GB/s

15.7 13.4

测试中的平均数值
更快的写入速度，GB/s

11.8 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Samsung M471A1K43DB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 35
读取速度，GB/s

13.4 15.7
写入速度，GB/s

8.0 11.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5471-030.A00LF 8GB

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Kingston 9905713-001.A00G 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F4-3200C16-8GIS 8GB

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PNY Electronics PNY 2GB

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V-Color Technology Inc. TL48G30S8KSRGB15 8GB

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Kingston 99U5584-005.A00LF 4GB

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Crucial Technology CT102464BA160B.M16 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston 9905702-010.A00G 8GB

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Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3200C16-16GFX 16GB

Kingston KHX1600C9D3/8G 8GB

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Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB