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Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB

Samsung M378B5173BH0-CH9 4GB vs SK Hynix HMA81GS6CJR8N-UH 8GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 25
    左右 8% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 6.8
    测试中的平均数值
SK Hynix HMA81GS6CJR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GS6CJR8N-UH 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 13.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 25
  • 读取速度，GB/s
    13.4 left arrow 14.6
  • 写入速度，GB/s
    8.0 left arrow 6.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 2073

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

SK Hynix HMA81GS6CJR8N-UH 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
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内存RAM
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
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A-DATA Technology DOVF1B163G2G 2GB
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Crucial Technology BL8G26C16S4B.8FD 8GB
内存RAM