Samsung M471B5173QH0-YK0 4GB vs Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 47

左右 4% 更低的延时

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

报告一个错误

更快的读取速度，GB/s

14.8 12.3

测试中的平均数值
更快的写入速度，GB/s

11.6 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 47
读取速度，GB/s

12.3 14.8
写入速度，GB/s

8.0 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-2666C19-8GSXK 8GB

G Skill Intl F4-2666C19-8GSXK 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB