Samsung M378B5173EB0-CK0 4GB vs Avant Technology J642GU42J5213N2 16GB

总分

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分

Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB

差异规格评论

差异

Samsung M378B5173EB0-CK0 4GB

需要考虑的原因
Samsung M378B5173EB0-CK0 4GB

报告一个错误

Avant Technology J642GU42J5213N2 16GB

需要考虑的原因
Avant Technology J642GU42J5213N2 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时
更快的读取速度，GB/s

14 13.9

测试中的平均数值
更快的写入速度，GB/s

8.9 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173EB0-CK0 4GB

Avant Technology J642GU42J5213N2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

13.9 14.0
写入速度，GB/s

8.1 8.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2150 2345

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Kingston 9905630-063.A00G 16GB

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Samsung M393B5170FH0-CK0 4GB

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Crucial Technology CT8G4SFRA32A.M8FR 8GB

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Micron Technology 18ASF1G72PZ-2G1AV 8GB

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Kingston KVR533D2N4 512MB

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Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Apacer Technology GD2.1129WH.001 16GB

Apacer Technology GD2.1129WH.001 16GB