Samsung M378B5273CH0-CH9 4GB vs Corsair CMD32GX4M4C3200C14C 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Corsair CMD32GX4M4C3200C14C 8GB

Corsair CMD32GX4M4C3200C14C 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Corsair CMD32GX4M4C3200C14C 8GB

需要考虑的原因
Corsair CMD32GX4M4C3200C14C 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 -48% 更低的延时
更快的读取速度，GB/s

15.4 13.2

测试中的平均数值
更快的写入速度，GB/s

11.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Corsair CMD32GX4M4C3200C14C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 25
读取速度，GB/s

13.2 15.4
写入速度，GB/s

8.4 11.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International Co. Ltd. TYA4U2666D19161C 16GB

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Kingston 9965516-112.A00LF 16GB

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Corsair CMD16GX4M4A2666C15 4GB

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Kingston 99U5474-026.A00LF 4GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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Corsair CM2X1024-6400C4 1GB

Kingston 9905663-021.A00G 16GB

Kingston 9905663-021.A00G 16GB