Samsung M378B5273CH0-CH9 4GB vs Corsair CMW16GX4M2E3200C16 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Corsair CMW16GX4M2E3200C16 8GB

Corsair CMW16GX4M2E3200C16 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Corsair CMW16GX4M2E3200C16 8GB

需要考虑的原因
Corsair CMW16GX4M2E3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

18 13.2

测试中的平均数值
更快的写入速度，GB/s

14.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Corsair CMW16GX4M2E3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.2 18.0
写入速度，GB/s

8.4 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4B.M8FB1 16GB