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Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB

Samsung M378B5273CH0-CH9 4GB vs Crucial Technology CT4G4DFS8266.C8FE 4GB

总分
star star star star star
Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分
star star star star star
Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

差异 规格 评论

差异

Samsung M378B5273CH0-CH9 4GB 需要考虑的原因
Samsung M378B5273CH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 47
    左右 21% 更低的延时
Crucial Technology CT4G4DFS8266.C8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 47
  • 读取速度，GB/s
    13.2 left arrow 14.0
  • 写入速度，GB/s
    8.4 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2640

Samsung M378B5273CH0-CH9 4GB RAM的比较

Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB

Crucial Technology CT4G4DFS8266.C8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
内存RAM
Kingston 99U5428-042.A00G 4GB
Kingston 99U5428-042.A00G 4GB
Corsair CMSA8GX3M2A1333C9 4GB
Corsair CMSA8GX3M2A1333C9 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMK8GX4M1A2400C16 8GB
Corsair CMK8GX4M1A2400C16 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Super Talent F24SB8GH 8GB
Super Talent F24SB8GH 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMR32GX4M2A2666C16 16GB
Corsair CMR32GX4M2A2666C16 16GB
内存RAM