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Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
比较
Samsung M378B5273CH0-CH9 4GB vs Crucial Technology CT4G4DFS8266.C8FG 4GB
总分
Samsung M378B5273CH0-CH9 4GB
总分
Crucial Technology CT4G4DFS8266.C8FG 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5273CH0-CH9 4GB
报告一个错误
需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FG 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
37
左右 -28% 更低的延时
更快的读取速度,GB/s
15.8
13.2
测试中的平均数值
更快的写入速度,GB/s
9.9
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
29
读取速度,GB/s
13.2
15.8
写入速度,GB/s
8.4
9.9
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2143
2384
Samsung M378B5273CH0-CH9 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Crucial Technology CT4G4DFS8266.C8FG 4GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-011.A03LF 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-5066C20-8GVK 8GB
Kingston 9965525-018.A00LF 4GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C16-16GTZKO 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Golden Empire CL15-15-15 D4-2666 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4X4GF2133C13K4 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMR16GX4M2C 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMH16GX4M2Z3600C18 8GB
Kingston 99U5429-007.A00LF 2GB
Samsung M471A1K43DB1-CTD 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A1K43EB2-CVF 8GB
Samsung M393B1G70BH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
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Bug description
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